BU505 high voltage npn multiepitaxial fast-switching transistor n high voltage capability n very high switching speed n high ruggedness applications n electronic ballasts for fluorescent lighting n switch mode power supplies description the BU505 is a high voltage npn fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps. its characteristics make it also ideal for power supplies. ? internal schematic diagram september 2001 1 2 3 to-220 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 700 v i c collector current 2.5 a i cm collector peak current (t p < 5 ms) 4 a i b base current 1 a i bm base peak current (t p < 5 ms) 2 a p tot total dissipation at t c 25 o c 75 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1/6
thermal data r thj-case thermal resistance junction-case max 1.67 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1500 v v ce = 1500 v t case = 125 o c 0.15 1 ma ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 100 ma l = 25mh 700 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 0.9 a 5 v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 0.9 a 1.3 v i s/b second breakdown current v ce = 120 v t = 200 m s 2a t s t f inductive load storage time fall time v clamp = 250 v i c = 2 a i b1 = 0.7 a v be(off) = -5v r bb = 0 l = 200 m h 2 350 m s ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 %. safe operating area derating curve BU505 2/6
dc current gain base emitter saturation voltage inductive storage time collector emitter saturation voltage inductive fall time reverse biased soa BU505 3/6
inductive load switching test circuits 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier BU505 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data BU505 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com BU505 6/6
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